mixers - sub-harmonic - chip 3 3 - 50 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc339 gaas mmic sub-harmonically pumped mixer, 33 - 42 ghz v02.1007 general description features functional diagram the hmc339 chip is a sub-harmonically pumped (x2) mmic mixer with an integrated lo amplifi er which can be used as an upconverter or downconverter. the chip utilizes a gaas phemt technology that results in a small overall chip area of 1.07mm 2 . the 2lo to rf isolation is excellent eliminating the need for addi- tional fi ltering. the lo amplifi er is a single bias (+3v to +4v) two stage design with only +2 dbm nominal drive requirement. all data is measured with the chip in a 50 ohm test fi xture connected via 0.025mm (3 mil) ribbon bonds of minimal length <0.31 mm (<12 mils). integrated lo amplifi er: +2 dbm input sub-harmonically pumped (x2) lo high 2lo/rf isolation: > 37 db die size: 1.32 x 0.81 x 0.1 mm electrical specifi cations, t a = +25 c, as a function of vdd typical applications the hmc339 is ideal for: ? 33 to 42 ghz microwave radios ? up and down converter for point to point radios ? satellite communication systems *unless otherwise noted, all measurements performed as downconverter, if= 1 ghz. parameter if = 1 ghz lo = +2 dbm & vdd = +4v if = 1 ghz lo = +2 dbm & vdd = +3v units min. typ. max. min. typ. max. frequency range, rf 33 - 42 33 - 38 ghz frequency range, lo 16.5 - 21 16.5 - 19 ghz frequency range, if dc - 3 dc - 3 ghz conversion loss 10 13 10 12 db noise figure (ssb) 10 13 10 12 db 2lo to rf isolation 27 37 23 37 db 2lo to if isolation 30 40 25 40 db ip3 (input) 5 10 3 8 dbm 1 db compression (input) -4 0 -5 -1 dbm supply current (idd) 28 38 25 38 ma
mixers - sub-harmonic - chip 3 3 - 51 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion gain vs. temperature @ lo = +2 dbm, vdd= +4v conversion gain vs. temperature @ lo = +2 dbm, vdd= +3v conversion gain vs. lo drive @ vdd = +4v conversion gain vs. lo drive @ vdd = +3v isolation @ lo = +2 dbm, vdd = +4v isolation @ lo = +2 dbm, vdd = +3v -20 -16 -12 -8 -4 0 30 31 32 33 34 35 36 37 38 39 40 41 42 + 25 c + 85 c - 55 c conversion gain (db) frequency (ghz) -20 -16 -12 -8 -4 0 30 31 32 33 34 35 36 37 38 39 40 41 42 0 dbm + 2 dbm + 4 dbm conversion gain (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 10 30 31 32 33 34 35 36 37 38 39 40 41 42 isolation (db) frequency (ghz) lo/rf lo/if rf/if 2lo/rf 2lo/if -60 -50 -40 -30 -20 -10 0 10 30 31 32 33 34 35 36 37 38 39 40 41 42 isolation (db) frequency (ghz) lo/rf lo/if rf/if 2lo/rf 2lo/if -20 -16 -12 -8 -4 0 30 31 32 33 34 35 36 37 38 39 40 41 42 0 dbm + 2 dbm + 4 dbm conversion gain (db) frequency (ghz) -20 -16 -12 -8 -4 0 30 31 32 33 34 35 36 37 38 39 40 41 42 + 25 c + 85 c - 55 c conversion gain (db) frequency (ghz) hmc339 v02.1007 gaas mmic sub-harmonically pumped mixer, 33 - 42 ghz
mixers - sub-harmonic - chip 3 3 - 52 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input ip3 vs. temperature @ lo = +2 dbm, vdd = +4v* input ip3 vs. temperature @ lo = +2 dbm, vdd = +3v* input ip2 vs. lo drive @ vdd = +4v* input ip2 vs. lo drive @ vdd = +3v* input ip3 vs. lo drive @ vdd = +4v* input ip3 vs. lo drive @ vdd = +3v* * two-tone input power = -10 dbm each tone, 1 mhz spacing. 0 4 8 12 16 20 33 34 35 36 37 38 39 40 41 0 dbm + 2 dbm + 4 dbm ip3 (dbm) frequency (ghz) 0 4 8 12 16 20 33 34 35 36 37 38 39 40 41 + 25 c + 85 c - 55 c ip3 (dbm) frequency (ghz) 0 10 20 30 40 50 60 70 33 34 35 36 37 38 39 40 41 0 dbm + 2 dbm + 4 dbm ip2 (dbm) frequency (ghz) 0 10 20 30 40 50 60 70 33 34 35 36 37 38 39 40 41 0 dbm + 2 dbm + 4 dbm ip2 (dbm) frequency (ghz) 0 4 8 12 16 20 33 34 35 36 37 38 39 40 41 + 25 c + 85 c - 55 c ip3 (dbm) frequency (ghz) 0 4 8 12 16 20 33 34 35 36 37 38 39 40 41 0 dbm + 2 dbm + 4 dbm ip3 (dbm) frequency (ghz) hmc339 v02.1007 gaas mmic sub-harmonically pumped mixer, 33 - 42 ghz
mixers - sub-harmonic - chip 3 3 - 53 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input p1db vs. temperature @ lo = +2 dbm, vdd = +4v input p1db vs. temperature @ lo = +2 dbm, vdd = +3v input ip2 vs. temperature @ lo = +2 dbm, vdd = +4v* input ip2 vs. temperature @ lo = +2 dbm, vdd = +3v* * two-tone input power = -10 dbm each tone, 1 mhz spacing. rf & lo return loss @ lo = +2 dbm, vdd = +4v if return loss @ lo = +2 dbm, vdd = +4v -10 -8 -6 -4 -2 0 2 4 6 8 10 34 35 36 37 38 39 40 + 25 c + 85 c - 55 c p1db (dbm) frequency (ghz) -10 -8 -6 -4 -2 0 2 4 6 8 10 34 35 36 37 38 39 40 + 25 c + 85 c - 55 c p1db (dbm) frequency (ghz) -20 -15 -10 -5 0 012345678910 if return loss (db) frequency (ghz) -20 -15 -10 -5 0 0 5 10 15 20 25 30 35 40 lo rf return loss (db) frequency (ghz) 0 10 20 30 40 50 60 70 33 34 35 36 37 38 39 40 41 + 25 c + 85 c - 55 c ip2 (dbm) frequency (ghz) 0 10 20 30 40 50 60 70 33 34 35 36 37 38 39 40 41 + 25 c + 85 c - 55 c ip2 (dbm) frequency (ghz) hmc339 v02.1007 gaas mmic sub-harmonically pumped mixer, 33 - 42 ghz
mixers - sub-harmonic - chip 3 3 - 54 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mxn spurious @ if port, vdd = +4v if bandwidth @ lo = +2 dbm mxn spurious @ rf port, vdd = +4v upconverter performance conversion gain, lo = +2 dbm, vdd = +4v nlo mrf 5 4 3 2 1 0 -2 44 -1 42 53 018-14 1x4213 25547 rf = 39 ghz @ -10 dbm lo = 19 ghz @ +2 dbm all values in dbc below if power level. measured as downconverter nlo mif 5 4 3 2 1 0 -2 30 -1 x 36 013-20 1x363 23754 if = 1 ghz @ -10 dbm lo = 19 ghz @ +2 dbm all values in dbc below rf power level. measured as upconverter -20 -16 -12 -8 -4 0 26 28 30 32 34 36 38 40 42 vdd= +4v vdd= +3v conversion gain (db) frequency (ghz) -20 -16 -12 -8 -4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 vdd= +3v vdd= +4v conversion gain (db) frequency (ghz) hmc339 v02.1007 gaas mmic sub-harmonically pumped mixer, 33 - 42 ghz
mixers - sub-harmonic - chip 3 3 - 55 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com absolute maximum ratings outline drawing rf / if input (vdd = +5v) +13 dbm lo drive (vdd = +5v) +13 dbm vdd +5.5v continuous pdiss (ta = 85 c) (derate 2.64 mw/c above 85 c) 238 mw storage temperature -65 to +150 c operating temperature -55 to +85 c notes: 1. all dimensions in inches (millimeters) 2. all tolerances are 0.001 (0.025) 3. die thickness is 0.004 (0.100) backside is ground 4. bond pads are 0.004 (0.100) square 5. bond pad spacing, ctr-ctr: 0.006 (0.150) 6. backside metallization: gold 7. bond pad metallization: gold die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. electrostatic sensitive device observe handling precautions hmc339 v02.1007 gaas mmic sub-harmonically pumped mixer, 33 - 42 ghz
mixers - sub-harmonic - chip 3 3 - 56 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com assembly diagram pad number function description interface schematic 1vdd power supply for the lo amplifi er. an external rf bypass capacitor of 100 - 330 pf is required. a mim border capacitor is recommended. the bond length to the capacitor should be as short as possible. the ground side of the capacitor should be connected to the housing ground. 2rf this pad is ac coupled and matched to 50 ohm. 3if this pad is dc coupled and should be dc blocked externally using a series capacitor whose value has been chosen to pass the necessary if frequency range. any applied dc voltage to this pin will result in die non-function and pos- sible die failure. 4lo this pad is ac coupled and matched to 50 ohm. pad descriptions hmc339 v02.1007 gaas mmic sub-harmonically pumped mixer, 33 - 42 ghz
mixers - sub-harmonic - chip 3 3 - 57 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on rf, lo & if ports. an rf bypass capacitor should be used on the vdd input. a 100 pf single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 mils) from the chip is recommended. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mount ing surface should be clean and fl at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possib le, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic 3 mil ribbon bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic 3 mil ribbon bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc339 v02.1007 gaas mmic sub-harmonically pumped mixer, 33 - 42 ghz
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